Achieving high-level DLC film deposition with proprietary sputtering technology!
DLC film formation (film quality: ta-C domain, surface roughness Ra 0.16 nm, transmittance: 88%) achieved through sputtering, which has had many challenges in the past.
The RAM CATHODE (four-sided opposing cathode) dramatically improves the ionization rate, allowing for the formation of DLC (ta-C) using a DC pulse power supply without the need for HIPIMS power supply. 【Conventional Sputtering Method】 Due to the low ionization rate of carbon, it was necessary to use HIPIMS power supply to forcibly increase the ionization rate in order to obtain the ta-C region. 【RAM Cathode Developed by Our Company】 By arranging targets on four opposing sides, it is possible to enhance the confinement of plasma due to the magnetic field between the targets, resulting in the formation of high-density plasma. Within the confined plasma, the collisions between electrons, rebounding argon, and C flux promote the ionization of Ar ions and C flux, making it easier to form C-C bonds in the DLC film. As a result, we have achieved the formation of high-hardness and high-smoothness DLC without using HIPIMS power supply. *For more details, please refer to the PDF document or feel free to contact us.
- Company：京浜ラムテック
- Price：Other
